8 results
P+ implanted 6H-SiC n+-i-p diodes: evidence for a post-implantation-annealing dependent defect activation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 1693 / 2014
- Published online by Cambridge University Press:
- 17 June 2014, mrss14-1693-dd04-01
- Print publication:
- 2014
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A Robust Process for Ion Implant Annealing of SiC in a Low-Pressure Silane Ambient
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- Journal:
- MRS Online Proceedings Library Archive / Volume 815 / 2004
- Published online by Cambridge University Press:
- 15 March 2011, J1.5
- Print publication:
- 2004
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Structural, optical and chemical characterization of 300°C, MeV ion implanted and 1700°C annealed 6H-SiC
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- Journal:
- MRS Online Proceedings Library Archive / Volume 640 / 2000
- Published online by Cambridge University Press:
- 21 March 2011, H5.28
- Print publication:
- 2000
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Boron Doping of Silicon Using Excimer Lasers
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- Journal:
- MRS Online Proceedings Library Archive / Volume 129 / 1988
- Published online by Cambridge University Press:
- 25 February 2011, 591
- Print publication:
- 1988
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A Self-Annealing Technique for Simultaneous Titanium Silicide and N+/P Junction Formation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 45 / 1985
- Published online by Cambridge University Press:
- 25 February 2011, 177
- Print publication:
- 1985
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Oxygen Influence on Titanium Silicide Formation
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- Journal:
- MRS Online Proceedings Library Archive / Volume 25 / 1983
- Published online by Cambridge University Press:
- 22 February 2011, 137
- Print publication:
- 1983
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Study of Titanium and Nickel Silicide Formation By Q-Switched Laser and Multiscanning E-Beam*
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- Journal:
- MRS Online Proceedings Library Archive / Volume 4 / 1981
- Published online by Cambridge University Press:
- 15 February 2011, 443
- Print publication:
- 1981
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Multiply Scanned Electron Beam Annealing of Si Implanted GaAs
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- Journal:
- MRS Online Proceedings Library Archive / Volume 4 / 1981
- Published online by Cambridge University Press:
- 15 February 2011, 695
- Print publication:
- 1981
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